Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

Introduction.- Growth mechanism of silicon nanowires.- Stability of silicon nanostructures.- Novel electronic properties of silicon nanostructures.- Summary and remarks.

Prof. Zhang is currently a professor at the Department of Physics and Materials Science, City University of Hong Kong. Prof. Zhang's research area is Computational Materials Physics and Chemistry, including: (1) energetics, kinetics and dynamics of materials nucleation and growth; (2) nano- and micro-structures and related properties of systems in materials science, surface science and chemistry; and (3) development of related methodologies and theories. His recent research focus is on nanoscience, including interactions of nanomaterials with chemical and biological systems, aiming at promoting the applications of nanostructured materials in energy-related and chemical, biological and environmental areas. He has published over 260 papers in internationally refereed journals and 5 book chapters in the areas of Chemical Physics, Materials Science, Condensed Matter Physics and Surface Science. His work has been cited more than 4000 times and his H-index has reached 32. Prof. Zhang hasbeen honored with (1) a Third-class State Natural Science Award of China in 1997, (2) a First-class Award of Scientific and Technological Development of China in 1997, (3) a Friedrich Wilhelm Bessel Research Award (http://www.avh.de/en/programme/preise/index.htm) from the Alexander von Humboldt Foundation, Germany in 2004, and (4) a Second-class State Natural Science Award of China in 2005.