III-Nitride Based Light Emitting Diodes and Applications

Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides.- Ultra-Efficient Solid-State Lighting.- LEDs Based on Heteroepitaxial GaN on Si Substrates.- Epitaxial Growth of GaN on Patterned Sapphire Substrates.- Growth and optical properties of GaN-based non- and semipolar LEDs.- Internal Quantum Efficiency in Light Emitting Diodes.- Internal Quantum Efficiency; Jong-In Shim.- III-Nitride Tunnel Junctions and their Applications.- Green, Yellow and Red LEDs.- AlGaN based deep-ultraviolet light-emitting diodes.- Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs.- Light Extraction of High Efficient Light-Emitting Diodes.- Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs.- Phosphors and white LED packaging.- High voltage LEDs.- Emerging System Level Applications for LED Technology. 

Tae-Yeon Seong received his PhD from the University of Oxford in 1992. He is currently a Professor of Materials Science and Engineering and currently Chair of Department of Nanophotonics at Korea University. His research focuses on the area of wide band-gap materials and devices (emitters, detectors and electronics) using GaN and ZnO, developing these materials for illumination applications, and the development of oxide-based and nanomaterials-based transparent conducting oxides for LEDs and OLEDs. He has authored and coauthored over 410 papers in peer-reviewed journals and holds 200 patents (registered and pending). He is a Fellow of the Institute of Physics (UK) and SPIE (The International Society for Optics and Photonics), an Associate Editor of Semiconductor Science and Technology, and an Editorial Advisory Committee Member of the Electrochemical Society Journals.

Jung Han is the William Norton Professor in Technological Innovation and a Professor of Electrical Engineering at Yale University. Professor Han's current research activities include blue, green, and ultraviolet (UV) light emitting devices for energy-efficient solid-state lighting, synthesis of AlGaInN nanostructures, nanoscale phenomena in crystal growth, and AlGaInN photonic devices. He has published more than 250 papers in peer-reviewed journals gathering more than 9,000 citations, and has served as editor of four books and special journal issues. He holds ten U.S. patents and is the co-founder of Saphlux, a startup company based on his inventions for semipolar GaN LEDs. Prof. Han has received numerous awards including a Department of Commerce R&D 100 Award, MRS Ribbon Award, and EMC Best Paper Award. Han is a member of the Connecticut Academy of Science and Engineering, and a Fellow of the Institute of Physics (IoP) and the Institute of Electrical and Electronic Engineers (IEEE).

Hiroshi Amano received D.Eng from Nagoya University in 1989.