Nanoscale Redox Reaction at Metal/Oxide Interface
A Case Study on Schottky Contact and ReRAM
(Sprache: Englisch)
This book examines the investigation and intentional control of metal/oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR).
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This book examines the investigation and intentional control of metal/oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR).
Klappentext zu „Nanoscale Redox Reaction at Metal/Oxide Interface “
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
Inhaltsverzeichnis zu „Nanoscale Redox Reaction at Metal/Oxide Interface “
- Workfunction Control of Metal Contact on Oxide Semiconductors- Schottky Contact Formation on Oxide Semiconductors
- Surface Passivation Effect on Schottky Contact
- Resistive Changing Behaviour of Metal/Oxide Structure
- Forming Process of Oxide Based ReRAM Device with Metal/Oxide Interface
- Summary
Autoren-Porträt von Takahiro Nagata
Dr. Takahiro NAGATANational Institute for Materials Science (NIMS) International Center for Materials Nanoarchitectonics Nano-Electronics Materials Unit Advanced Device Materials Group
1-1 Namiki, Tsukuba, Ibaraki 305-0044, JAPAN
Bibliographische Angaben
- Autor: Takahiro Nagata
- 2020, 1st ed. 2020, XI, 89 Seiten, 51 farbige Abbildungen, Masse: 15,5 x 23,5 cm, Kartoniert (TB), Englisch
- Verlag: Springer, Berlin
- ISBN-10: 4431548491
- ISBN-13: 9784431548492
- Erscheinungsdatum: 22.05.2020
Sprache:
Englisch
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