Power GaN Devices

1 Properties and advantages of gallium nitride; Daisuke Ueda.- 2 Substrate issues and epitaxial growth; Stacia Keller.- 3 GaN-on-Silicon CMOS compatible process; Denis Marcon.- 4 Lateral GaN-based power devices; Umesh Mishra.- 5 GaN-based vertical transistors; Srabanti Chowduri.- 6 GaN-based nanowire transistors; Tomas Palacios.- 7 Deep level characterization: electrical and optical methods; Robert Kaplar.- 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi.- 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni.- 10 Cascode configuration for normally-off devices; Primit Parikh.- 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda.- 12 Fluorine implanted E-mode transistors; Kevin Chen.- 13 Drift effects in GaN HV power transistors; Joachim Wuerfl.- 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee.- 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.

Matteo Meneghini received the Ph.D. degree in the optimization of GaN-based LED and laser structures from the University of Padova, Italy. He is currently Assistant Professor at the Department of Information Engineering, University of Padova. During his career he has extensively worked on the reliability and parasitics of GaN-based semiconductor devices for application in the RF, power electronics and optoelectronics fields: his research is mainly focused towards the understanding of the physical mechanisms that limit the performance and the reliability of GaN-based LEDs, lasers, and HEMTs.

Gaudenzio Meneghesso received the Ph.D. degree in electrical and telecommunication engineering from the University of Padova, Padova, Italy, in 1997. In 1995, he was with the University of Twente, Enschede, The Netherlands, with a Human Capital and Mobility fellowship (within the SUSTAIN Network) working on the dynamic behavior of protection structures against electrostatic discharge (ESD). Since 2011, he has been a Full Professor with the Department of Information Engineering, University of Padova.
Enrico Zanoni was born in Verona, Italy, in 1956. He received the Laurea degree in physics (cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 1982, after a student internship with the S. Carlo Foundation, Modena.  During 1985-1988, he was an Assistant Professor with the Faculty of Engineering, University of Bari, Bari, Italy. From 1988 to 1993, he frequently visited the U.S. and established research collaborations with Bell Laboratories; Hughes Research Laboratories; IBM T. J. Watson Research Center; Massachusetts Institute of Technology, Cambridge, MA, USA; TRW (currently, Northrop Grumman); University of California, Santa Barbara, CA, USA; and many other industrial and academic laboratories. During 1996-1997, he was a Full Professor of industrial electronics with the University of Modena and Reggio Emilia. Heis